Affordable Access

Publisher Website

Domain wall pinning by defects and the C-I transition

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
48
Issue
4
Identifiers
DOI: 10.1016/0038-1098(83)90750-0

Abstract

Abstract The influence of randomly distributed defects on domain wall fluctuations is investigated. These fluctuations lead to the long-range repulsion between domain walls resulting in the experimentally observed n;∼ √ z. sfnc; T;− T c z. sfnc; behaviour of the domain wall density near the C-I transition. The impossibility of thermal depinning of one domain wall in the impurity potential is also shown.

There are no comments yet on this publication. Be the first to share your thoughts.