Affordable Access

Publisher Website

Static and dynamic analysis of amorphous-silicon field-effect transistors

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
29
Issue
1
Identifiers
DOI: 10.1016/0038-1101(86)90197-8

Abstract

Abstract Analytical expressions have been developed for the analysis of static and dynamic behaviour of hydrogenated-amorphous-silicon based field-effect transistors. The current/voltage, capacitances and transcapacitances/voltage characteristics are related to the material parameters. The characteristic temperature, T c , of the exponential band-tail states distribution is shown to influence strongly their shape and magnitude. An exact integration of the potential in the structure has allowed us to give expressions for the source and drain resistances. Finally, we present an equivalent circuit of a-Si:H TFT which can be employed in circuit simulation for the optimisation of integrated circuits.

There are no comments yet on this publication. Be the first to share your thoughts.