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Investigation of double barrier MOS tunnel diodes with PECVD silicon quantum well

Authors
Journal
Microelectronics Reliability
0026-2714
Publisher
Elsevier
Publication Date
Volume
51
Issue
7
Identifiers
DOI: 10.1016/j.microrel.2011.03.018

Abstract

Abstract Double barrier metal–oxide–semiconductor tunnel diodes with ultrathin PECVD Si and thermal SiO 2 layers were fabricated. The measured capacitance–voltage and current–voltage characteristics were interpreted and physical parameters of the structures were extracted by means of a theoretical model.

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