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Selective area growth for opto-electronic integrated circuits (OEICs)

DOI: 10.1016/b978-0-444-89317-8.50023-x


Abstract Selective area epitaxy (SAE) is emerging as an important technology in the fabrication of optoelectronic integrated circuits. This paper reviews the current growth technologies for their applicability to the process of SAE. It discusses in detail the interaction on the masked area with the adjoining epitaxial window. The minimization of the features formed by this interaction whilst optimizing selectivity is seen as the main aim of the growth processes.

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