Affordable Access

Publisher Website

Effect of the target shuttering on the characteristics of the Ta–Si–N thin films by reactive magnetron co-sputtering

Surface and Coatings Technology
Publication Date
DOI: 10.1016/j.surfcoat.2009.06.031
  • Ta–Si–N
  • Target Shuttering
  • Microstructure
  • Resistivity
  • Hardness


Abstract The Ta–Si–N thin films were prepared using a reactive magnetron co-sputtering with and without an alternating target shutter control at different N 2 flow ratios (FN 2% = FN2/(FAr + FN 2) × 100%) of 3–20%. The evolution of microstructure, composition, morphology, resistivity, and nanomechanical properties of Ta–Si–N films was characterized by X-ray diffraction (XRD), energy dispersive X-ray spectrum (EDS), scanning electronic microscopy, four-point probe technique and nanoindentation, respectively. The broad XRD peaks of Ta–Si–N films with and without target shuttering at low 3–10 FN 2% showed the microstructure was quasi-amorphous i.e. nanocrystalline grains embedded in an amorphous matrix. The quasi-amorphous Ta–Si–N without target shuttering was transformed into the polycrystalline phase at 20 FN 2% while that with target shuttering still remained in quasi-amorphous microstructure due to the increased Si content. The resistivity of quasi-amorphous Ta–Si–N films with and without target shuttering at 3–10 FN 2% ranged in 262–385 μΩ cm while that of Ta–Si–N films at 20 FN 2% was much higher at 976–9925 μΩ cm. The hardness of quasi-amorphous Ta–Si–N films with and without target shuttering at 3–10 FN 2% ranged from 14.3 to 18.5 GPa while that of polycrystalline Ta–Si–N film was about 10.3 GPa. Quasi-amorphous Ta–Si–N films had much lower resistivity, higher nanohardness and smooth morphology compared to the polycrystalline film.

There are no comments yet on this publication. Be the first to share your thoughts.


Seen <100 times