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High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors

Authors
Journal
Microelectronics Reliability
0026-2714
Publisher
Elsevier
Publication Date
Volume
51
Issue
12
Identifiers
DOI: 10.1016/j.microrel.2011.05.019

Abstract

Highlights ► Thin MOS capacitors high fluence 1.8 MeV proton irradiation effects are investigated. ► C– V curves of 7 nm n-type MOS capacitors are measured before and after irradiation. ► A decrease of accumulation regime capacitance is shown at fluences up to 5 × 10 12 cm −2. ► It is the first time that such device effect is observed within the LHC fluence range. ► This effect is mainly due to a proton-induced increase of the substrate resistivity.

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