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Correlation between structure and properties of Er2O3nanocrystalline thin films

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Volume
354
Identifiers
DOI: 10.1016/j.jnoncrysol.2007.10.102
Keywords
  • Ellipsometry
Disciplines
  • Chemistry

Abstract

Abstract Er 2O 3 thin films have been deposited by low-pressure metalorganic chemical vapor deposition (MOCVD) also plasma assisted (RP-MOCVD), using tris(isopropylcyclopentadienyl)erbium and O 2 on Si(1 0 0), Si(1 1 1) and corning glass substrates. The RP-MOCVD approach produced highly (1 0 0)-oriented, dense and mechanically stable Er 2O 3 films with columnar structure, while films with (1 1 1) texture are deposited by MOCVD. A high refractive index of 2.1 at 589.3 nm comparable to that of bulk single crystalline Er 2O 3, a high transparency in the vis-near UV range and an optical band-gap of 6.5 eV have been found, which make Er 2O 3 interesting as antireflective and protective coating. A static dielectric constant k ∼ 12, a density of interface traps as low as 4.2 × 1010 cm 2 eV −1, for 5–10 nm thick Er 2O 3 layers grown on Si(1 0 0), render the present Er 2O 3 films interesting also as high- k dielectric in CMOS devices.

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