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Can multiband coupling effects due to remote bands cause significant normal-incidence absorption inn-type direct-gap semiconductor quantum wells?

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Publication Date
Volume
24
Issue
3
Identifiers
DOI: 10.1006/spmi.1996.0445
Keywords
  • Intersubband Transitions
  • Quantum Wells
  • N-Type Direct-Gap Semiconductors
  • Normal-Incidence
Disciplines
  • Physics

Abstract

Abstract Surprisingly, several experiments have reported that normal-incidence light absorption due to inter-conduction-subband transitions in direct-gap semiconductor quantum wells is as strong as in-plane-incidence absorption. In contrast to other models, a recent theoretical study claimed that a 14-band k p model including multiband coupling terms due to remote-conduction bandsis able to explain the experimental results. In this work, a concise formulation extends the model beyond 14 bands. Nevertheless, after rederiving the optical transition matrix elements, this analysis clearly shows that the oscillator strength for the in-plane polarized optical intersubband transition due to the multiband coupling effects is much smaller than the oscillator strength for the normal-to-plane polarized optical intersubband transition. These results indicate that the multiband coupling effects due to remote-conduction bands cannot cause a sufficient in-plane polarized optical intersubband transition to produce the observed normal-incidence absorption in the desirable n-type III–V compound semiconductor quantum wells.

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