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Evidence for metastable state of DX center in $Al_xGa_{1-x}As$

Authors
Publisher
Materials Research Society
Publication Date
Keywords
  • Physics
Disciplines
  • Physics

Abstract

Photo-deep level transient spectroscopy with 1.38 eV light reveals a new level with thermal activation energy 0.2 eV of DX centers in silicon doped $Al_xGa_{1-x}As$ (x=0.26) for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of thermodynamically metastable state DX.

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