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Scanning tunneling microscopy study of the epitaxial growth of strained In0.82Ga0.18As layers on InP

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0039-6028(95)01091-2
Keywords
  • I.2. Non Metals

Abstract

Abstract The 2D–3D growth mode transition of compressively strained In x Ga 1− x As layers ( x = 0.82 or 2% lattice mismatch) grown on an In 0.53Ga 0.47As buffer layer lattice matched to InP was studied using scanning tunneling microscopy. Up to 4 deposited monolayers, a layer by layer growth mode is maintained. The surface layer appears to be more compact for the strained layers than for the lattice matched buffer layer. After 5 monolayers were deposited the surface topography undergoes very significant change and threedimensional patterns, highly anisotropic in the growing plane, appear. These remarkable evolutions are attributed to the competition between surface energy necessary to form new island facets and elastic energy relaxation allowed with small sized islands.

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