Affordable Access

Publisher Website

The effects of localized hot-carrier-induced charge in VLSI switching circuits

Authors
Journal
Microelectronics Journal
0026-2692
Publisher
Elsevier
Publication Date
Volume
21
Issue
3
Identifiers
DOI: 10.1016/0026-2692(90)90040-a
Disciplines
  • Design

Abstract

Abstract This paper presents data collected from CMOS test circuits designed to characterize hot-carrier effects in digital switching circuits. Test circuits were configured as CMOS inverters, transmission gates, and NMOS transmission gates. The MOSFETs within the circuits could be probed so that the degradation of their dc characteristics could be directly measured. These circuits were hot-carrier-stressed under pulsed switching conditions similar to their operation in VLSI circuits. The results indicate that device degradation is strongly dependent on the circuit configuration and switching conditions. Transmission gate circuits exhibit a more severe degradation in switching characteristics than inverter circuits due to the localization of the hot-carrier-induced charge. The localized nature of hotcarrier-induced charge must be considered at the circuit simulation level to accurately assess the effect on circuit performance.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Effects of hot-carrier degradation in analog CMOS...

on Microelectronic Engineering Jan 01, 1997

Analytical analysis of nanoscale multiple gate MOS...

on Microelectronics Reliability Jan 01, 2009

Bulk charge effects in VLSI MOSFET's

on Solid-State Electronics Jan 01, 1981
More articles like this..