Affordable Access

Publisher Website

Rate theory model of dopant incorporation during molecular beam epitaxy: effects of Coulomb repulsion

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
317
Issue
3
Identifiers
DOI: 10.1016/0039-6028(94)90291-7

Abstract

Abstract Dopant incorporation during growth of films with δ-function like dopant profiles by Si molecular beam epitaxy is dominated by surface segregation at temperatures above 300°C. In this case the concentration should decay exponentially toward the surface. However, for sheet concentrations > 10 14 cm −2, we observe a plateau at about 10 20 cm −3, starting at the position of the intended δ-layer and extending toward the surface. Existing models are inconsistent with this observation. We describe a rate theory model for incorporation of Sb atoms into a Si film that predicts such a plateau, provided the Sb impurities are repelled from each other by means of a screened Coulomb interaction. The effects of temperature and growth rate on the Sb distribution predicted by our model are both consistent with the experiments.

There are no comments yet on this publication. Be the first to share your thoughts.