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Growth of CdSiP2single crystals by self-seeding vertical Bridgman method

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
340
Issue
1
Identifiers
DOI: 10.1016/j.jcrysgro.2011.12.040
Keywords
  • A2. Vertical Bridgman Method
  • A2. Single Crystal Growth
  • B1. Non-Linear Optic Crystal
  • B1. Cdsip2

Abstract

Abstract Using a high purity CdSiP 2 polycrystalline charge synthesized in a single-temperature zone furnace, a CdSiP 2 single crystal with dimensions of 8 mm in diameter and 40 mm in length was successfully grown by the vertical Bridgman method. The quality of the crystal was characterized by high resolution X-ray diffraction and the full width at half maximum (FWHM) of the rocking curve for the (200) face is 33″. Thermal property measurements show that: the mean specific heat of CdSiP 2 between 300 and 773 K is 0.476 J g −1 K −1; the thermal conductivity of the crystal along the a- and c-axes is 13.6 W m −1 K −1 and 13.7 W m −1 K −1 at 295 K, respectively; and the thermal expansion coefficient measured along the a- and c-axes is 8.4×10 −6 K −1 and −2.4×10 −6 K −1, respectively. The optical transparency range of the crystal is 578–10,000 nm, and there is no absorption loss in the spectrum from 0.7 to 2.5 μm, as often exists with ZnGeP 2 crystals grown from the melt.

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