Abstract The dynamic as well as static characteristics of molybdenum/hydrogenated amorphous-silicon Schottky barrier diode were investigated. We obtained the rectification ratio of 10 9 and steady current densities of up to 1.5A/cm 2 at ±2V bias voltage. The breakdown voltage was more than 20V. Switching operation was observed even at 10MHz without appreciable distortion. It was estimated that the charge-up time and charge-decay time of a liquid crystal pixel with 1mm×1mm area in series with a diode having a junction area of 15μm×15μm were less than 1μsec and 100sec, respectively.