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Switching characteristics of amorphous silicon Schottky barrier diodes

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0022-3093(83)90377-0

Abstract

Abstract The dynamic as well as static characteristics of molybdenum/hydrogenated amorphous-silicon Schottky barrier diode were investigated. We obtained the rectification ratio of 10 9 and steady current densities of up to 1.5A/cm 2 at ±2V bias voltage. The breakdown voltage was more than 20V. Switching operation was observed even at 10MHz without appreciable distortion. It was estimated that the charge-up time and charge-decay time of a liquid crystal pixel with 1mm×1mm area in series with a diode having a junction area of 15μm×15μm were less than 1μsec and 100sec, respectively.

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