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Improvement ofa-plane GaN crystalline quality by overgrowth ofin situetched GaN template

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
315
Issue
1
Identifiers
DOI: 10.1016/j.jcrysgro.2010.09.027
Keywords
  • A1. Etching
  • A3. Metalorganic Vapor Phase Epitaxy
  • B1. Nitrides
  • B2. Semiconducting Iii–V Materials
Disciplines
  • Chemistry

Abstract

Abstract This study demonstrates improvement of crystalline quality of a-plane GaN by growing it on a porous GaN template fabricated by in situ etching of a first GaN film using hydrogen and ammonia gases at 1150 °C in a metal organic chemical vapor deposition (MOCVD) reactor. Photoluminescence (PL) and high-resolution X-ray diffraction (HR-XRD) measurements show that the crystalline quality of the GaN film re-grown on the porous GaN template was superior to the quality of the initially grown GaN film. This study demonstrates a simple, short procedure for growing high quality a-GaN using a single MOCVD tool without ex situ processes.

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