Abstract A new self-consistent hole mobility model that includes the lattice and the hole temperature has been proposed. By including the lattice and hole temperatures as well as the effective transverse field and the interface fixed charge, the model predicts the saturation of the hole drift velocity and shows the effects of Coulomb scattering, surface phonon scattering, and surface roughness scattering. The model has been incorporated into a device simulation program, SNU-2D. The simulation results have been compared with the reported experimental data and the measured 0.1 μm pMOSFETs, and they are shown to agree quite well. The new model is expected to estimate the characteristics of very short-channel devices in the hydrodynamic model simulations.