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Raman spectra and valence force field of single-crystalline β Ga2O3

Authors
Journal
Journal of Solid State Chemistry
0022-4596
Publisher
Elsevier
Publication Date
Volume
45
Issue
2
Identifiers
DOI: 10.1016/0022-4596(82)90274-2

Abstract

Abstract Single-crystalline β Ga 2O 3 was studied by Raman spectroscopy between 10 and 1000K. A complete valence force field was obtained. The agreement between observed and calculated Raman active frequencies is 0.8% for the whole spectrum. The potential energy distribution shows that stretching and bending modes are not independent. A complete description of the modes is given in terms of cartesian displacements. The temperature dependence of the Raman band half-widths was studied and is discussed in terms of anharmonicity at high temperature; the broadening which appears above 100K seems to be related to the appearance of defects. Our spectra are better understood in terms of the C2 m space group proposed by Geller rather than P1 as recently proposed by G. M. Wolten and A. B. Chase ( J. Solid State Chem. 16, 377, 1976).

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