Affordable Access

Publisher Website

Defect and phonon effects in In1−χGaχPp-ntunnel junctions

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
9
Issue
17
Identifiers
DOI: 10.1016/0038-1098(71)90172-4

Abstract

Abstract Measurements have been made at 4.2°K on p-n tunnel junctions in the mixed crystal systems In 1− χ Ga x P. Large excess currents and zero bias conductance minima indicate a high concentration of defects in the junctions, which are fabricated on Zn-doped substrates. As the composition changes from InP to GaP, a single k ≅ 0 phonon mode is observed at energies near the top of the InP optical phonon band, which becomes the LO phonon mode in GaP.

There are no comments yet on this publication. Be the first to share your thoughts.