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Defect and phonon effects in In1−χGaχPp-ntunnel junctions

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
9
Issue
17
Identifiers
DOI: 10.1016/0038-1098(71)90172-4

Abstract

Abstract Measurements have been made at 4.2°K on p-n tunnel junctions in the mixed crystal systems In 1− χ Ga x P. Large excess currents and zero bias conductance minima indicate a high concentration of defects in the junctions, which are fabricated on Zn-doped substrates. As the composition changes from InP to GaP, a single k ≅ 0 phonon mode is observed at energies near the top of the InP optical phonon band, which becomes the LO phonon mode in GaP.

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