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Tunneling resistance and magnetoresistance of Al-oxide-Al tunnel junctions

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
63
Issue
6
Identifiers
DOI: 10.1016/0038-1098(87)90276-6

Abstract

Abstract The temperature and magnetic field dependence of the tunnel resistance (R T) of Al-O-Al junctions have been studied for temperatures below 4.2 K. It is demonstrated that below 2.0 K R T increases suddenly and shows a negative magnetoresistance. The magnitude of this increase depends on the absolute value of R T and is the smaller the larger R T is. The effect corresponds to the behaviour of “weak localization” in thin disordered metallic films.

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