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Thermopower and thermally induced domain wall motion in (Ga, Mn)As

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
150
Identifiers
DOI: 10.1016/j.ssc.2010.01.023
Keywords
  • A. Ferromagnets
  • D. Thermoelectrics
  • D. Domain Wall
  • D. Spin Caloritronics
Disciplines
  • Physics

Abstract

Abstract We study two reciprocal thermal effects in the ferromagnetic semiconductor (Ga, Mn)As by scattering theory: domain wall motion induced by a temperature gradient and heat currents pumped by a moving domain wall. The effective out-of-plane thermal spin transfer torque parameter P Q β Q , which governs the coupling between heat currents and a magnetic texture, is found to be of the order of unity. Unpinned domain walls are predicted to move at speed 10 m/s in temperature gradients of the order 10 K/μm. The cooling power of a moving domain wall only compensates the heating due to friction losses at ultra-low domain wall velocities of about 0.07 m/s. The Seebeck coefficient is found to be of the order 100–500 μV/K at T = 10 K , in good agreement with recent experiments.

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