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Field ion microscopy observation of intrinsic stacking faults in iridium

Authors
Journal
Materials Science and Engineering A
0921-5093
Publisher
Elsevier
Publication Date
Volume
212
Issue
1
Identifiers
DOI: 10.1016/0921-5093(96)10175-1
Keywords
  • Iridium
  • Field Ion Microscopy
  • Intrinsic Stacking Fault

Abstract

Abstract An intrinsic stacking fault in Ir is characterized using FIM techniques. Lattice distortion in the vicinity of the partial dislocation loop bounding the fault is evaluated. The maximum radius of visible distortion in the vicinity of the partial dislocation is found to be ∼4.6 nm. This result provides experimental data for the assessment of the magnitude of lattice disturbance caused by crystal defects, which can be useful in the computer modeling of crystal defects.

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