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Investigation of the oxygen gas sensing performance of Ga2O3thin films with different dopants

Authors
Journal
Sensors and Actuators B Chemical
0925-4005
Publisher
Elsevier
Publication Date
Volume
93
Identifiers
DOI: 10.1016/s0925-4005(03)00171-0
Keywords
  • Gas Sensing
  • Gallium Oxide
  • Zinc Oxide
  • Cerium Oxide
  • Sol–Gel Process

Abstract

Abstract The oxygen gas sensing performance of Ga 2O 3 semiconducting thin films doped with Ce, Sb, W and Zn have been investigated. These thin films have been prepared by the sol–gel process and were deposited on sapphire transducers with inter-digital electrodes and a platinum heater integrated. The sensors were exposed to various concentrations of oxygen gas in an ambient of nitrogen and the gas sensing performance has been examined. The responses of sensors doped with Ce, Sb, W and Zn were stable and reproducible at their respective operating temperatures. It was observed that Ga 2O 3 films doped with Ce, Zn and W are promising for oxygen gas sensing applications.

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