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Voltage acceleration of time-dependent breakdown of ultra-thin gate dielectrics

Authors
Journal
Microelectronics Reliability
0026-2714
Publisher
Elsevier
Publication Date
Volume
45
Issue
12
Identifiers
DOI: 10.1016/j.microrel.2005.04.007

Abstract

Abstract Experimental results support the power-law model to correctly describe the voltage acceleration of time-dependent dielectric breakdown (TDDB) in an oxide thickness range where direct tunnelling of electrons is the primary leakage mechanism. The accessible experimental time range to prove a certain voltage acceleration behaviour is compared to the time range that needs to be covered during a projection to use conditions. Further, the problem of correct gate oxide breakdown detection in PFET devices is discussed, because it strongly affects the determination of time to breakdown, Weibull slope, acceleration model, and acceleration factor.

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