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Preferential local dissolution of indented silicon {111} surface by aqueous solutions of HF with varying pH

Authors
Journal
Solid State Ionics
0167-2738
Publisher
Elsevier
Publication Date
Volume
73
Identifiers
DOI: 10.1016/0167-2738(94)90272-0
Keywords
  • Dislocation Reaction
  • Etching
  • Silicon
  • Topochemical Reaction
Disciplines
  • Chemistry

Abstract

Abstract Topochemical etching processes of indented silicon {111} surfaces were observed in detail by using aqueous solutions of hydrofluoric acid with controlled pH. Specific preference of a local dissolution reaction with respect to dislocations, concentrated near the slip bands, was diminished with increasing pH. Dissolution was concluded to be a two-step process, i.e., the surface oxidation at high dislocation density due mainly to the dissociative adsorption of dissolved oxygen, followed by the dissolution of oxides attacked mainly by HF 2 − ions. These mechanisms were explained by virtue of a band model with a higher localized band of electrons which belong to the dangling bonds along the dislocation, as compared with the band of adsorbed oxygen.

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