Affordable Access

Publisher Website

Electronic structure of the reconstructed InP(100) surface

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
52
Issue
5
Identifiers
DOI: 10.1016/0022-3697(91)90170-5
Keywords
  • Surface States
  • Semiconductor Surface
  • Inp
Disciplines
  • Computer Science

Abstract

Abstract The Chadi total energy algorithm was extended to perform tight binding calculations on the InP(100) surface. The tight binding parameters for the In-P interactions were determined in the usual way and those for the In-In interactions obtained from the Harrison universal parameter scheme. From considerations of the total energy, we found that 2 × 2 A and 4 × 2 asymmetrical dimer structures are equally probable. However, from the comparison of the position of filled and unfilled surface states with the experimental value, we conclude that the 4 × 2 structure could be the optimum dimerized structure on the InP(100) surface.

There are no comments yet on this publication. Be the first to share your thoughts.