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ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell

Authors
Journal
Solar Energy Materials and Solar Cells
0927-0248
Publisher
Elsevier
Volume
117
Identifiers
DOI: 10.1016/j.solmat.2013.04.028
Keywords
  • Sis Solar Cell
  • Azo
  • Tunnel Barrier
  • Metal Oxides
  • Ald
  • Xps

Abstract

Abstract Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al2O3, ZrO2, Y2O3, and La2O3 thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current–density as low as 3×10−7A/cm2, a fill factor up to 71.3%, and open-circuit voltage as high as 527mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La2O3. ZrO2 and notably Al2O3 show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy.

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