Abstract Laser Assisted Chemical Vapor Deposition (LCVD) is a new approach for low temperature selective epitaxy of III-V compounds with great potential for maskless multicomponent device integration on the same wafer. GaAs substrates were thermally biased to temperatures as low as 250°C and exposed simultaneously to fluxes of trimethylgallium (TMG) and arsine (AsH3). Ar ion laser scanning of the substrate, at carefully selected growth conditions, resulted in epitaxial selective deposition at rates as low as a few Å/s per scan. The LCVD growth rates as a function of deposition temperatures are reported for different laser powers and seem to follow an Arrhenius type relation. Activation energies in the range 10–13 kcal/mol were estimated for growth temperatures in the range 250–400°C. X-ray diffraction topography is demonstrated as a powerful nondestructive tool for structural characterization. We have utilized this technique to optimize the LCVD growth conditions in order to achieve device quality films that are free from lattice distortion. Low temperature photoluminescence shows the presence of impurity peaks that can be related to carbon.