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Global predictions ofT2symmetric deep level wavefunctions in semiconductors

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
48
Issue
9
Identifiers
DOI: 10.1016/0038-1098(83)91019-0

Abstract

Abstract Numerical results of T 2 symmetric SP 3 bonded deep level wavefunctions due to short range defect potentials in Si, Ge, GaAs and InP are presented. The general features of defect wavefunctions are insensitive to either the band structure of the host of defect energy level. The total occupation probability of wavefunction located on 0 . 1 . 2 shells around the defect center is about 60–85%. This part of wavefunction may be expressed in several simple symmetric combinations of SP 3 hybrid orbitals. The rest part of the wavefunction extends diversely over a wide range of space.

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