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New “silicon limit” of power devices

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
46
Issue
8
Identifiers
DOI: 10.1016/s0038-1101(02)00010-2
Keywords
  • Coolmost
  • Super-Junction Devices
  • Cb-Structure
  • On-Resistance
  • Hexagonal Cell

Abstract

Abstract The hexagonal pattern of the voltage-sustaining layer in the COOLMOST with p-region in the center of each unit cell, which produces the lowest specific on-resistance, is studied based on a technologically achievable minimum aspect ratio of the width of each region to the thickness of the voltage-sustaining layer. A breakdown voltage higher than the previous result is also achieved by breaking the requirement of the different peak fields to be equal. Furthermore, the doping of the p-region near the drain is modified to get a better result. It is believed that this is the new theoretical “Silicon Limit”. The results show that a value of R on less than 1/3 of the previous one is obtained. Theoretical analysis is given and shows in good agreement with the numerical simulation.

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