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InAs quantum dots on GaAs((1)over-bar(1)over-bar(2)over-bar)B

Publication Date
  • Indium Compounds
  • Iii-V Semiconductors
  • Semiconductor Quantum Dots
  • Semiconductor Growth
  • Molecular Beam Epitaxial Growth
  • Scanning Tunnelling Microscopy
  • Wetting
  • Crystal Defects
  • Scanning-Tunneling-Microscopy
  • Nanostructure Formation
  • Surface
  • Gaas
  • Shape
  • Reconstructions
  • Gaas(2511)
  • Morphology
  • Physics


InAs quantum dots (QDs) were prepared by molecular beam epitaxy on GaAs(-1-1-2)B substrates. Shape and size distribution of the QDs were investigated using in situ scanning tunneling microscopy as function of preparation temperature between 435 and 550 °C. The wetting layer is not flat but undulated in submicrometer scale in a similar way as the bare substrate. The atomic structure of the wetting layer is the same as found for the flat base of InAs QDs grown on GaAs(-1-1-3-)B substrates. The shape of the QDs is given by {110}, (-1-1-1)B, and {-1-4-3}B bounding facets and a round vicinal (00-1) region. Unexpectedly, the number density increases and the size distribution sharpens, when the growth temperature is increased from 435 to 470 °C, which is attributed to lattice defects incorporated into the QDs during growth at 435 °C.

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