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1.3 μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well index-coupled distribution feedback laser diodes

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
51
Issue
6
Identifiers
DOI: 10.1016/j.sse.2007.04.014
Keywords
  • Algainas/Algainas Sc-Mqw
  • Index-Couple Distribution Feedback Laser Diodes
Disciplines
  • Chemistry
  • Physics

Abstract

Abstract This article reported on fabrication and characterization for 1.3 μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well index- coupled distribution feedback laser diodes with low threshold current density, high output power, wide modulation bandwidth and narrow emission linewidth by metalorganic chemical vapor deposition. A grating layer composed of undoped GaInAsP ( λ g = 1.1 μm) layer was made of holographic technology, and used to modulate the lasing wavelength for single mode emission. The 3.5 μm ridge-stripe and 300 μm cavity LDs without facet coating exhibits the excellent performances, including a threshold current of 11 mA, a slope efficiency of 0.25 W/A, a characteristic temperature of 80 K in 20–80 °C, a relaxation frequency response of 9.24 GHz, and a narrow full width at half maximum of 0.31 nm. The side mode suppression ratio is about 50 dB for AR/HR facet coating under 60 mA bias current.

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