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Nonequilibrium solidification of monocrystalline Si induced by ArF-excimer-laser irradiation

Authors
Journal
Thermochimica Acta
0040-6031
Publisher
Elsevier
Publication Date
Volume
218
Identifiers
DOI: 10.1016/0040-6031(93)80420-f
Keywords
  • Nonequilibrium Solidification
  • Excimer Laser
  • Mathematical Modeling
  • Surface Structure
  • Monocrystalline Si

Abstract

Abstract Results of theoretical and experimental study of ArF-excimer-laser-induced recrystallization of monocrystalline Si(100) surface are presented. The theoretical model of laser-induced thermal processes including the density changes due to thermal expansion and phase-changing is introduced. Comparison of calculated data with in situ LEED analysis indicate a significant correlation between laser-induced high solidification velocity and/or undercooling and crystalline structure of the irradiated surfaces.

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