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Fabrication of Cd1− xZnxS films with controllable zinc doping using a vapor zinc chloride treatment

Authors
Journal
Solar Energy Materials and Solar Cells
0927-0248
Publisher
Elsevier
Publication Date
Volume
94
Issue
12
Identifiers
DOI: 10.1016/j.solmat.2010.06.037
Keywords
  • Vapor Zinc Chloride Treatment
  • Cd1− Xznxs
  • Cds
  • Cdte Solar Cells

Abstract

Abstract Cd 1− x Zn x S films suitable for application in photovoltaic devices have been produced by annealing CdS films in vaporous zinc chloride and characterized by optical absorption, X-ray diffraction, energy dispersive X-ray spectroscopy and scanning electron microscopy. The incorporation of Zn in CdS was found to be dependent on the annealing temperature and duration, reaching a concentration as high as 50% ( x=0.5) and producing a blue shift of 0.3 eV in bandgap energy. CdTe solar cells fabricated with Cd 1− x Zn x S showed substantially higher short-circuit current than the cells with CdS as the window layer. The optimal concentration of Zn was found to be around 5%. High efficiencies were obtained in SnO 2/Cd 1− x Zn x S/CdTe cells.

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