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Molecular simulation: a microscopic approach to study the growth of native silicon oxide

Authors
Journal
Materials Science and Engineering B
0921-5107
Publisher
Elsevier
Publication Date
Volume
17
Identifiers
DOI: 10.1016/0921-5107(93)90102-s

Abstract

Abstract An atomic scale model is used to study the dynamics of oxide growth on an Si substrate with and without point defects. The results obtained on an ideal Si substrate have been reported already and have been shown to be consistent with experimental data. This paper analyses the Si point defects behaviour and their effect on the thickness and the “roughness” of the oxide atomic layers during Si oxidation.

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