Abstract The contribution to electrical resistivity of impurity atoms adjacent to vacancies in metals is calculated. The calculation is based on the Born approximation, which allows separation of the effects of the individual imperfections from interference effects. Lattice relaxation is neglected. The resistivity due to Ag or Zn impurities adjacent to a vacancy in Au is related to the resistivity of the separate imperfections as πAg+vac = πAg+πvac−0·11 (πAg × πvac) 1 2 ; πzn+vac = πzn+πvac+ 0·10 (πzn × πvac) 1 2 . Effects of anisotropy of the scattering are found to be almost completely removed if the vacancy-impurity pairs are randomly oriented along the several 〈110〉 directions.