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Er-doped dielectric films by radiofrequency magnetron co-sputtering

Authors
Journal
Surface and Coatings Technology
0257-8972
Publisher
Elsevier
Publication Date
Volume
204
Identifiers
DOI: 10.1016/j.surfcoat.2009.09.068
Keywords
  • Rf Magnetron Sputtering
  • Erbium
  • Photoluminescence
  • Silica
  • Alumina
Disciplines
  • Communication

Abstract

Abstract The radiofrequency magnetron sputtering co-deposition is potentially an excellent synthesis technique to obtain Er-doped dielectric films, materials characterized by the emission of an intense photoluminescence signal at λ = 1.54 μm (the most used wavelength in fiber glass for optical telecommunications). A comparison of the emission of Er 3+ ions in different matrices such as silica and alumina is made. All of the deposited Er-doped films showed a photoluminescence yield strongly dependent on the condition of synthesis (in particular, on the way to furnish energy to the growing film) and on the post-synthesis annealing. In all cases, the photoluminescence yield of Er:Al 2O 3 films was larger than that of Er:SiO 2 ones.

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