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Resonant hyper-Raman scattering in semiconductors: Excitonic effects

Authors
Journal
Physica B Condensed Matter
0921-4526
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0921-4526(98)01462-8
Keywords
  • Light Scattering
  • Semiconductors
  • Excitons
Disciplines
  • Physics

Abstract

Abstract A theoretical model of resonant hyper-Raman scattering involving two incident photons of frequency ω L is developed. The model is valid for energies 2ℏ ω L around the absorption edge of the semiconductor, and takes into account Wannier excitons as intermediate states in the scattering process. Both deformation potential and Fröhlich interaction are included in the model: It is found that Fröhlich-mediated scattering is a dipole-allowed process, in contrast to one-phonon Raman scattering, where the Fröhlich mechanism is dipole-forbidden. We have performed numerical calculations of the resonance profile (hyper-Raman cross-section versus 2ℏ ω L) and applied our model to materials with dipole-allowed and dipole-forbidden optical transitions.

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