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Modeling of Yb3+-sensitized Er3+-doped silica waveguide amplifiers

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Keywords
  • A Model For Yb3+-Sensitized Er3+-Doped Silica Waveguide Amplifiers Is Described And Numerically Inve
  • The Amplified Spontaneous Emission In The Ytterbium-Band And The Quenching Process Between Excited E
  • For Pump Wavelengths Between 860 And 995 Nm
  • The Amplified Spontaneous Emission In The Ytterbium-Band Is Found To Reduce Both The Gain And The Op
  • The Achievable Gain Of The Yb3+-Sensitized Amplifier Is Found To Be Higher Than In An Er3+-Doped Sil
  • However
  • It Is Important To Optimize The Yb-Concentration According To The Choice Of Pump Wavelength

Abstract

Modeling of Yb3+-sensitized Er3+-doped silica waveguide amplifiers - DTU Orbit (04/03/14) Modeling of Yb3+-sensitized Er3+-doped silica waveguide amplifiers - DTU Orbit (04/03/14) Modeling of Yb3+-sensitized Er3+-doped silica waveguide amplifiers. / Lester, Christian; Bjarklev, Anders Overgaard; Rasmussen, Thomas; Dinesen, Palle Geltzer. In: Journal of Lightwave Technology, Vol. 13, No. 5, 1995, p. 740-743. Publication: Research - peer-review › Journal article – Annual report year: 1995

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