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Electrical properties of diamond thin films grown by chemical vapor deposition technique

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
253
Identifiers
DOI: 10.1016/0040-6090(94)90309-3
Keywords
  • Chemical Vapour Deposition
  • Diamond
  • Electrical Properties And Measurements
  • Raman Scattering
Disciplines
  • Chemistry

Abstract

Abstract Diamond thin films grown on high resistivity, 〈100〉-oriented silicon substrates by the hot filament chemical vapor deposition method have been characterized by four-point probe and Hall effect measurements. The resistivities of both as-grown and chemically etched samples were lower than expected. The Raman spectra showed dramatic changes from two broad bands (one starting at 1250 cm −1 and peaking at 1350 cm −1 and the other starting at 1500 cm −1 and peaking at 1580 cm −1) for the as-grown samples to a sharp peak centered at 1332 cm −1 with a full width at half-maximum of 10.7 cm −1 for the chemically treated sample. Hall measurements yielded carrier concentrations in the temperature range 180–300 K. From a plot of carrier concentration vs. inverse temperature, activation energies of 0.36 and 0.20 eV are obtained for the two chemically treated samples. The resistivity values at room temperature of 100 Ω cm are significantly lower than the values recently observed for other undoped samples ( ϱ=10 3−10 4 Ω cm ). The low resistivity values observed in this work are attributed to the disordered graphitic regions between the diamond crystalline grains.

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