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Exoelectron emission from ion-implanted MgO single crystals

Authors
Journal
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
0168-9002
Publisher
Elsevier
Publication Date
Volume
280
Identifiers
DOI: 10.1016/0168-9002(89)90943-1

Abstract

Abstract Thermally stimulated exoelectron emission (TSEE) measurements were carried out for pure MgO single crystals, annealed and then irradiated to either ion beams of different doses and energies or X-rays. H +- and He +-ion implantation causes an increase of the TSEE yield compared to that of nonimplanted samples. The TSEE response is dependent on the dose and energy of the implanted ions.

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