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Contradictory increase of critical layer thickness in InxGa1− xSb/GaAs heterostructures grown by MBE

Authors
Journal
Ultramicroscopy
0304-3991
Publisher
Elsevier
Publication Date
Volume
51
Identifiers
DOI: 10.1016/0304-3991(93)90147-p

Abstract

Abstract The microstructure and lattice-mismatch accommodation in In x Ga 1- x Sb/GaAs heterostructures grown by MBE have been studied using transmission electron microscopy. It was found that the critical thickness below which homogeneously strained layers are obtained increases with increasing In content. This is in contradiction to what would be expected since the lattice mismatch increases simultaneously. In the InSb heterostructures three-dimensional growth ensued in 3-monolayer-thick layers while 60° misfit dislocations that glide on the {111} planes giving rise to stacking faults appeared in the 4-monolayer-thick layer. Both islands and misfit dislocations were observed in 2-monolayer-thick layers of the In 0.25Ga 0.75Sb heterostructures.

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