Affordable Access

Publisher Website

Electrical transport properties of copper-doped tellurium films

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
66
Issue
3
Identifiers
DOI: 10.1016/0040-6090(80)90382-x

Abstract

Abstract Polycrystalline films of copper-doped tellurium were grown by co-evaporating copper and tellurium from separate boats. Measurements were made of the electrical transport properties of these films. It was observed that the addition of copper decreases the activation energies of both the conductivity and the mobility. The low temperature conduction data were interpreted on the basis of a variable range hopping mechanism while the high temperature data indicate the dominance of the grain boundary scattering mechanism.

There are no comments yet on this publication. Be the first to share your thoughts.