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A new method to extract diode parameters under the presence of parasitic series and shunt resistance

Authors
Journal
Microelectronics Reliability
0026-2714
Publisher
Elsevier
Publication Date
Volume
40
Issue
2
Identifiers
DOI: 10.1016/s0026-2714(99)00232-2

Abstract

Abstract A simple method is presented for extracting the diode ideality factor and saturation current in the presence of significant series and parallel parasitic resistances. Additionally, the values of both resistances can be determined. The method is compared to conventional direct optimization, which fails when both resistances are simultaneously significant.

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