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The effect of high energy boron co-implantation on the activation of silicon implants in GaAs

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DOI: 10.1016/b978-0-444-89418-2.50016-3

Abstract

The sheet carrier concentration of 200 keV 29Si+ implants at doses of 4 × 1012 and 1013 cm-2 has been investigated as a function of 500 keV B co-implantation dose in the range 5 × 1012 to 1014 cm-2 and annealing conditions. The activation behaviour of the Si implant was found to depend strongly on the B dose, the anneal temperature and whether rapid thermal or furnace annealing was used. Increased or decreased activation of the silicon implant was found to be possible depending on the implant and annealing schedules used.

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