Abstract An investigation on the deposition of silicon carbide to manufacture silicon carbide tubes from thermal decomposition of CH 3SiCl 3 in a hydrogen atmosphere is presented. A thermodynamic analysis is carried out to obtain the optimum conditions for this operation. A detailed design of the reactors is described. Two critical problems in the operation of the deposition and the solutions are given. A method of carbon coating is used to eliminate the crack induced by the different expansion coefficients of the β-SiC coating and the graphite substrate. The problem of scaling up is discussed.