Affordable Access

Publisher Website

A compact model for the ion implanted channel LDMOS transistor

Authors
Journal
Solid State Sciences
1293-2558
Publisher
Elsevier
Volume
14
Issue
4
Identifiers
DOI: 10.1016/j.solidstatesciences.2012.01.008
Keywords
  • Ldmos Device
  • Surface Potential
  • Ion Implanted Channel
  • Depletion Region

Abstract

Abstract This paper presents a compact model for the lateral double-diffused MOS transistor in which ion implantation is employed in the channel region. We show that the conventional LDMOS device models which do not include specifics of the implanted channel region cannot accurately predict behavior of such structure. We then propose a new physics based model which employs surface potential in the device. The model gives a robust formulation for both the channel and the drift regions and can accurately describe the performance of the ion implanted channel LDMOS structure.

There are no comments yet on this publication. Be the first to share your thoughts.