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Mechanism of breakdown voltage wavering in power MOSFET induced by silicon crystalline defect

Authors
Journal
Microelectronics Reliability
0026-2714
Publisher
Elsevier
Volume
51
Identifiers
DOI: 10.1016/j.microrel.2011.07.040
Disciplines
  • Chemistry

Abstract

Abstract This paper presents the impact of silicon crystalline defects generating mechanism of breakdown voltage degradation on low voltage vertical Power N-MOSFETs, functioning in avalanche mode. The physical defect determination is presented through a full failure analysis: it includes specific sample preparation, electrical characterization using EMMI techniques and physical characterizations using Scanning Electron Microscope, Transmission Electron Microscope and chemical delineation etches. Silicon crystal defects (edge dislocation and stacking fault) are found to be at the origin of the failure. Then, a discussion presents how the failure mechanism impacts the device structure and some possible root cause at the origin of the defect.

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