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Highly pressurized Kr agglomerates in sputtered Si films

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
241
Identifiers
DOI: 10.1016/0040-6090(94)90386-7

Abstract

Abstract High resolution electron microscopy experiments are presented for a plasma-sputter-deposited Si film with a high Kr concentration. The amorphous layer deposited shows an oscillating Kr concentration. The Kr resides in very small agglomerates of size < 1 nm. Bending measurements show that the pressure in the Kr agglomerates is very high, 3.9 GPa. Hardness measurements show that this pressure is limited by the fracture stress of the deposited film.

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