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Photoinduced changes in amorphous chalcogenide films, modified at low temperatures

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Volume
70
Issue
1
Identifiers
DOI: 10.1016/0022-3093(85)90090-0

Abstract

Abstract The selective solubility of amorphous As 2Se 3 and GeS 1.5 films modified by means of co-evaporation with In or Ga at low substrate temperatures was investigated. The photoinduced change of the solubility of these films is more pronounced in comparison with films of the same composition but deposited at higher substrate temperatures. The optimum impurity concentrations and substrate temperatures at which the modified films demonstrated maximum photoinduced changes of the dissolving rate were specified as about 5 at.% In at a −60°C substrate temperature for As 2Se 3 and about 10 at.% In or Ga at −50°C for GeS 1.5. These films may be promising as non-silver negative photoresists.

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