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Pulsed-laser deposition of Si nanoclusters

Authors
Journal
Applied Surface Science
0169-4332
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0169-4332(97)00659-4
Keywords
  • Pulsed-Laser Deposition
  • Si Nanoclusters
  • Nonlinear Optical Properties
Disciplines
  • Physics

Abstract

Abstract Growth properties of thin films of Si nanoclusters that were deposited on Si wafers by use of pulsed-laser ablation are discussed. The films were characterized by Atomic Force Microscopy (AFM) and X-ray Diffraction (XRD) and FTIR spectroscopy. Large nonlinear optical absorption was measured using a Free-Electron Laser at wavelengths near the infrared absorption band centered at 9.8 μm.

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